SIHG22N60E-GE3

SIHG22N60E-GE3

Manufacturer’s number : SIHG22N60E-GE3
Manufacturer : Vishay Siliconix
Detailed : MOSFET N-CH 600V 21A TO247AC
Detailed Description : N-Channel 600V 21A (Tc) 227W (Tc) Through Hole TO-247AC

Manufacturer Vishay Siliconix
Series
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current – Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1920pF @ 100V
FET Feature
Power Dissipation (Max) 227W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3